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C. Applications In their studies of oxide thickness dependence, Hughes et al. (47) and Derbenwick and Gregory (84) irradiated MOS devices using a constant value of applied field. Since they used different oxide thicknesses, it was also necessary for them to use different values of Vgr in order to maintain a constant initial electric field. The conclusions concerning thickness dependence require that the behavior be truly independent of Vgr. These conclusions are consistent with the D = 15 curve in our Fig.
Consider, for example, the specific function V,,(D) shown in Fig. 13a. It is instructive to determine the flat-band voltage at the end of each irradiation increment for this example. In order to simplify the analysis, we will assume that history-dependence is totally nonexistent, so MODELING OF IRRADIATED MOS STRUCTURES 35 that the flat-band shift will be entirely determined by the piecewise-linear family of approximate curves shown in Fig. 10a and b and by the chosen form of V,,(D). By reading the value of V,, from Fig.
5, one is forced to formulate unique models for various convenient separate combinations of the 27 different cases. Only three dimensions have been shown in Fig. 5 . When other important physical mechanisms are considered as well, the three-dimensional figure becomes a multidimensional block and the total number of possibilities becomes enormous. Obviously, we do not expect to readily find a simple model which is able to simultaneously treat a much larger number of possibilities. One must often be content with simple models that provide fast, reasonably accurate results with minimal effort.
Advances in Electronics and Electron Phisics. Vol. 58 by Author Unknown